r semiconductor LL60, LL60p small signal schottky diodes features mechanical da ta absolute ra tings(limiting values) electrical characteristics case : minmelf glass case (sod- 80) polarity: color band denotes cathode end weight : approx. 0.05gram metal-on-silicon junction, majority carrier conduction high current capability, low forward voltage dropextremely low reverse current i r ultra speed switching characteristicssmall temperature coefficient of forward characteristics satisfactory wave detection efficiency for use in recorder ? tv ? radio ? telephone as detectors,super high speed switching circuits, small current rectifier repetitive peak reverse voltage forward voltage reverse current i f =1ma LL60 0.35 0.26 0.70 0.70 1.0 5.0 0.5 0.5 1.0 1.0 10.0 1 5.0 4.0 10.0 60 350 LL60 LL60 LL60 LL60p LL60p LL60p LL60p i f =30ma i f =200ma v r =15v v r =1v f=1mhz v r =10v f=1mhz v i =3v f=30mhz c l =10pf r l =3.8k w i f =i r =1ma irr=1ma rc=100 w reverse recovery time junction capacitance junction ambient thermal resistance detection efficiency(see diagram 4) v rrm r q ja ma ma volts t stg /t j forward continuous current t a =25 c peak forward surge current(t=1s) storage and junction temperature range maximum lead temperature for soldering during 10s at 4mm from case symbols symbols parameters t est conditions parameters ty p value max min units value LL60 LL60p units -65 to+125 c c volts m a pf ns c/w % i f t l i fsm v f i r c j t rr h 400 230 150 50 30 30 20 . . . mini-melf dimensions in inches and (millimeters) 0.142(3.6) 0.134(3.4) 0.019(0.48) 0.011(0.28) 0.063(1.6) 0.055(1.4) r ja jf jinan jingheng co., ltd. no.51 heping road pr china tel:86-531-6943657 fax:86-531-6947096 www.jifusemicon.com s m a l l s i g n a l c h o t t k y d i o d e s 2-1
ratings and characte ristic curves LL60 fig.1-forward current versus forward volt age (typical values) fig.2-reverse current versus continuous reverse volt age fig.4-detection efficiency measurement circuit fig.3-junction capacitance versus continuous reverse applied volt age d.u.t . input:3v rms output c l r l 10pf 3.8k w ir(ua) c(pf) if(ma) vr(v) vr(v) vf(v) 0 0 0 10 0.20 0.5 20 0.40 1.0 30 0.60 1.5 40 50 0.80 2.0 60 1.00 2.5 70 1.20 3.0 80 1.40 3.5 4.0 90 100 0.2 5 0.4 10 0.8 20 0.6 15 1.0 25 30 ~ ~ ~ 1 2 4 3 5 6 2-2 jinan jingheng co., ltd. no.51 heping road pr china tel:86-531-6943657 fax:86-531-6947096 www.jifusemicon.com s m a l l s i g n a l c h o t t k y d i o d e s
ratings and characte ristics curves LL60p fig.1-forward current versus forward volt age (typical values) fig.2-reverse current versus continuous reverse volt age i r ( a) c(pf) if(ma) vr(v) vr(v) vf(v) 0 0 0 50 0.10 6 100 0.20 8 150 0.30 10 200 250 0.40 12 300 0.50 14 350 0.60 16 400 0.70 18 20 450 500 0.2 5 1 0.4 10 2 0.8 20 4 0.6 15 3 1.0 25 5 30 6 fig.3-junction capacitance versus continuous reverse applied volt age fig.4-detection efficiency measurement circuit d.u.t . input:3v rms output c l r l 10pf 3.8k w ~ ~ ~ 2-3 jinan jingheng co., ltd. no.51 heping road pr china tel:86-531-6943657 fax:86-531-6947096 www.jifusemicon.com s m a l l s i g n a l c h o t t k y d i o d e s
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